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Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications

Authors
Park, J.H.Lee, K.H.Mun, S.-J.Ko, G.Heo, S.Kim, J.H.Kim, E.Im, S.
Issue Date
2011
Publisher
AMER INST PHYSICS
Keywords
Low voltage; Organic thin-film transistor; Polymer blend; Solution process
Citation
AIP Conference Proceedings, v.1399, pp.847 - 848
Journal Title
AIP Conference Proceedings
Volume
1399
Start Page
847
End Page
848
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20595
DOI
10.1063/1.3666641
ISSN
0094-243X
Abstract
We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. This vertical flowing method provide us with phase-separated film (TIPS pentcene (up)/ i-PMMA(down) after drying. As fabricated on a highly capacitive 20 nm-thick Al 2O 3 dielectric, our device displayed a high mobility of 0.20cm 2/Vs, a low operation voltage of -10 V, and little hysteresis. © 2011 American Institute of Physics.
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