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Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors

Authors
Park, Ji HoonLee, Kwang H.Mun, Sung-jinKo, GunwooHeo, Seung JinKim, Jae HoonKim, EugeneIm, Seongil
Issue Date
Oct-2010
Publisher
ELSEVIER
Keywords
Solution process; Low-voltage; Polymer blend; Organic thin-film transistor
Citation
ORGANIC ELECTRONICS, v.11, no.10, pp.1688 - 1692
Journal Title
ORGANIC ELECTRONICS
Volume
11
Number
10
Start Page
1688
End Page
1692
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20698
DOI
10.1016/j.orgel.2010.07.020
ISSN
1566-1199
Abstract
We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. According to the optical-absorption and X-ray diffraction spectra, the solution-processed film appeared self-assembled with TIPS-pentacene (up) and i-PMMA dielectric (down) layers on substrates. As fabricated on a highly capacitive 100 nm-thick AlOx dielectric, our device displayed a high mobility of 0.34 cm(2)/V s, a low operation voltage of -15 V, and little hysteresis. (C) 2010 Elsevier B.V. All rights reserved.
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