Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes
- Authors
- Park, Jaehoon; Kang, Jong Mook; Kim, Dong Wook; Choi, Jong Sun
- Issue Date
- 1-Sep-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Organic thin-film transistors; Contact resistance; Vacuum thermal evaporation; Surface current
- Citation
- THIN SOLID FILMS, v.518, no.22, pp.6232 - 6235
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 22
- Start Page
- 6232
- End Page
- 6235
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20716
- DOI
- 10.1016/j.tsf.2010.03.168
- ISSN
- 0040-6090
- Abstract
- We investigated the effect of the deposition rate of Au source/drain electrodes on the contact resistance of the top-contact organic thin-film transistors (OTFTs). For the formation of source/drain contacts, Au was thermally deposited at the different rates of 0.5, 1.0, 5.0, and 13.0 angstrom/s. With increasing the Au deposition rate, the contact resistance extracted at the gate voltage of -30 V could be reduced from 14 x 10(6) to 2.4 x 10(6) Omega, resulting in the characteristic improvements of the top-contact OTFT. It is also found that the contact resistance significantly affects the off-state currents of the device having the short channel length of 10 pm. The control of the deposition rate of source/drain electrodes is suggested to optimize the contact properties of the top-contact OTFTs as well as the device performance. (C) 2010 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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