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Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors
- Authors
- Kim, Kangmin; Kim, Youngmin
- Issue Date
- Sep-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Overlap capacitance of source/drain (S/D); pentacene organic thin-film transistor (OTFT)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2344 - 2347
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 57
- Number
- 9
- Start Page
- 2344
- End Page
- 2347
- ISSN
- 0018-9383
- Abstract
- We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (C(GD), C(GS)) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer's capacitance model for the charge storage effect of OTFTs.
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Related Researcher
- Kim, Young min
- Engineering (Electronic & Electrical Engineering)