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Structural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection
- Authors
- Cha, Ho-Young
- Issue Date
- Feb-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Avalanche photodiode; Edge breakdown; Field plate; Silicon carbide
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.2, pp.672 - 676
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 56
- Number
- 2
- Start Page
- 672
- End Page
- 676
- ISSN
- 0374-4884
- Abstract
- The locally-enhanced electric field occurring at the etched junction surface of mesa-etched PIN avalanche photodiodes (APDs) causes early edge breakdown, resulting in a relatively lower multiplication and gain. The electric field distribution as a function of the intrinsic layer thickness and the bevel angle was investigated, and its influence on the characteristics of 4H-SiC PIN APDs, Such as the breakdown voltage, the quantum efficiency, and the gain, was studied. In addition, a new structure with a field plate is proposed to diminish the edge breakdown phenomenon in mesa-etched PIN APDs.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)