Realization of interfacial defect-induced photocatalytic gating at the TiO2/ZnO interface
- Authors
- Chang, Mincheol; Park, Byoungnam
- Issue Date
- 1-Jan-2022
- Publisher
- ELSEVIER
- Keywords
- ZnO; Localized states; Defect; Charge transfer
- Citation
- MATERIALS LETTERS, v.306
- Journal Title
- MATERIALS LETTERS
- Volume
- 306
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20967
- DOI
- 10.1016/j.matlet.2021.130909
- ISSN
- 0167-577X
- Abstract
- We demonstrated and probed interface trap-induced photoelectrochemical sensitization by defect reactions at the TiO2/ZnO interface formed through atomic layer deposition of ZnO. The presence of interfacial defects at the TiO2/ZnO was confirmed through photoluminescence measurement in which green emission was observed. The photoelectrochemical photocurrent (PECP) increased due to interfacial defect-induced charge transfer from ZnO to TiO2 under illumination with a green light, while the PECP decreased under illumination with a solar simulator including UV compared to that without ZnO due to a reduced depletion layer width in the TiO2. We elaborated on the role of the TiO2/ZnO interfacial defects by depleting the total ZnO layer sandwiched by the TiO2/ZnO and the ZnO/electrolyte interfaces, through which the dark current is minimized, and the PECP by interfacial traps is maximized.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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