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Pentacene thin-film transistor with poly(methyl methacrylate-co-methacrylic acid)/TiO2 nanocomposite gate insulator
- Authors
- Park, Jaehoon; Lee, Jong Won; Kim, Dong Wook; Park, Bong June; Choi, Hyoung Jin; Choi, Jong Sun
- Issue Date
- 30-Nov-2009
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Organic thin-film transistors; Insulator; Nanocomposite; Gate-leakage current
- Citation
- THIN SOLID FILMS, v.518, no.2, pp.588 - 590
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 2
- Start Page
- 588
- End Page
- 590
- ISSN
- 0040-6090
- Abstract
- A poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-MAA) and titanium dioxide (TiO2) composite was fabricated to use as a gate insulator in pentacene-based organic thin-film transistors (OTFTs). The dispersion stability was confirmed by observing the sedimentation time of TiO2 nanoparticles in the PMMA-co-MAA solution, which is essential to avoid a severe gate-leakage current in OTFTs. From the measured capacitance-frequency characteristics, a dielectric constant value of 4.5 was obtained for the composite film and 33 for the PMMA-co-MAA film. Consequently, we could enhance the field-induced current and reduce the threshold voltage of OTFT by adopting the composite insulator, without augmenting the gate-leakage current. (C) 2009 Elsevier B.V. All rights reserved.
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