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Thermoelectric Characteristics of p-Type (Bi,Sb)(2)Te-3/(Pb,Sn)Te Functional Gradient Materials with Variation of the Segment Ratio
- Authors
- Oh, Tae-Sung
- Issue Date
- Jul-2009
- Publisher
- SPRINGER
- Keywords
- Thermoelectric materials; functional gradient materials; bismuth telluride; lead telluride; figure of merit; output power
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.38, no.7, pp.1041 - 1047
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 38
- Number
- 7
- Start Page
- 1041
- End Page
- 1047
- ISSN
- 0361-5235
- Abstract
- The p-type (Bi,Sb)(2)Te-3/(Pb,Sn)Te functional gradient materials (FGMs) were fabricated by hot-pressing mechanically alloyed (Bi0.2Sb0.8)(2)Te-3 and 0.5 at.% Na2Te-doped (Pb0.7Sn0.3)Te powders together at 500A degrees C for 1 h in vacuum. Segment ratios of (Bi,Sb)(2)Te-3 to (Pb,Sn)Te were varied as 3:1, 1.3:1, and 1:1.6. A reaction layer of about 350-mu m thickness was formed at the (Bi,Sb)(2)Te-3/(Pb,Sn)Te FGM interface. Under temperature differences larger than 340A degrees C applied across a specimen, superior figures of merit were predicted for the (Bi,Sb)(2)Te-3/(Pb,Sn)Te FGMs to those of (Bi0.2Sb0.8)(2)Te-3 and (Pb0.7Sn0.3)Te. With a temperature difference of 320A degrees C applied across a specimen, the (Bi,Sb)(2)Te-3/(Pb,Sn)Te FGMs with segment ratios of 3:1 and 1.3:1 exhibited the maximum output powers of 72.1 mW and 72.6 mW, respectively, larger than the 63.9 mW of (Bi0.2Sb0.8)(2)Te-3 and the 26 mW of 0.5 at.% Na2Te-doped (Pb0.7Sn0.3)Te.
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