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Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at-5V

Authors
Lee, Kwang H.Lee, KimoonOh, Min SukChoi, Jeong-M.Im, SeongilJang, SungjinKim, Eugene
Issue Date
Feb-2009
Publisher
ELSEVIER
Keywords
Organic thin-film transistor; Pentacene; Low voltage; Polymer dielectric; High mobility; Flexible
Citation
ORGANIC ELECTRONICS, v.10, no.1, pp.194 - 198
Journal Title
ORGANIC ELECTRONICS
Volume
10
Number
1
Start Page
194
End Page
198
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21908
DOI
10.1016/j.orgel.2008.09.005
ISSN
1566-1199
Abstract
We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of similar to 2 MV/cm, a high capacitance of 26 nF/cm(2) with k = similar to 7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm(2)/V s, a threshold voltage of -2.5 V, and on/off ratio of 10(3) stably operating under -5V. (C) 2008 Elsevier B.V. All rights reserved.
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