나노 적층 구조를 응용한 저항성 기반 비휘발성 메모리 소자 특성 제어Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers
- Other Titles
- Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers
- Authors
- 유일환; 황진하
- Issue Date
- 2009
- Publisher
- 한국세라믹학회
- Keywords
- Resistive Switching; Nickel oxide; Filaments; Insulating layers
- Citation
- 한국세라믹학회지, v.46, no.3, pp.336 - 343
- Journal Title
- 한국세라믹학회지
- Volume
- 46
- Number
- 3
- Start Page
- 336
- End Page
- 343
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/22315
- ISSN
- 1229-7801
- Abstract
- Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.