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ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer
- Authors
- Lee, Kimoon; Kim, Ki-tae; Lee, Kwang H.; Lee, Gyubaek; Oh, Min Suk; Choi, Jeong-M.; Im, Seongil; Jang, Sungjin; Kim, Eugene
- Issue Date
- 10-Nov-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- high-k dielectric thin films; II-VI semiconductors; low-k dielectric thin films; polymers; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.19
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 19
- ISSN
- 0003-6951
- Abstract
- We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n-channel ZnO thin-film transistors (TFTs) with a low-k poly-4-vinylphenol and high-k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of similar to 0.3 cm(2)/V s and our inverter operates with a voltage gain of similar to 4 at low supplied voltages (5-7 V), demonstrating a dynamic response of similar to 20 ms.
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Related Researcher
- Kim, Eu gene
- Engineering (Applied Science)