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4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency
- Authors
- Liu, Handin; Mcintosh, Dion; Bai, Xiaogang; Pan, Huapu; Liu, Mingguo; Campbell, Joe C.; Cha, Ho Young
- Issue Date
- Sep-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Avalanche photodiodes (APDs); photodetector; silicon carbide; ultraviolet (UV) detector
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.20, no.17-20, pp.1551 - 1553
- Journal Title
- IEEE PHOTONICS TECHNOLOGY LETTERS
- Volume
- 20
- Number
- 17-20
- Start Page
- 1551
- End Page
- 1553
- ISSN
- 1041-1135
- Abstract
- We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 10(6), k similar to 0.1, and a spatially uniform response were achieved.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)