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Impact ionization coefficients in 4H-SiC

Authors
Loh, W. S.Ng, B. K.Ng, J. S.Soloviev, Stanislav I.Cha, Ho-YoungSandvik, Peter M.Johnson, C. MarkDavid, John P. R.
Issue Date
Aug-2008
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
avalanche multiplication; avalanche photodiodes (APDs); breakdown voltage; impact ionization; ionization coefficients; local model
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.8, pp.1984 - 1990
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
55
Number
8
Start Page
1984
End Page
1990
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/22700
DOI
10.1109/TED.2008.926679
ISSN
0018-9383
Abstract
Photomultiplication measurements using 244- and 325-nm excitation have been undertaken on a series of thick 4H-SiC avalanche diodes. With avalanche widths of between 2.7 and 6 mu m and the ability to measure multiplication as low as 1.001, a much wider electric field range has been covered than reported to date. The results show that the hole ionization coefficient (beta) can be obtained with a high degree of accuracy down to electric fields as low as similar to 0.9 MV/cm. The value of electron ionization coefficient (a) has been determined from mixed carrier multiplication characteristics, and the beta/alpha ratio is found to increase significantly with decreasing electric fields. Ionization coefficients are parameterized over the electric field range from 0.9 to 5 MV/cm, enabling the multiplication and breakdown characteristics of 4H-SiC to be predicted accurately.
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