Electrical and optical modeling of 4H-SiC avalanche photodiodes

Abstract

Optimal physical models and material parameters for 4H-SiC avalanche photodiodes (APDs) were studied using it two-dimensional device simulation tool. In the models, we took account of temperature-dependent impact ionization and absorption coefficient Lis a function Of Wavelength. The absorption coefficient spectra derived in this work exhibited a rapid increase below similar to 300 nm. which can be qualitatively incorporated into indirect and direct band transition models. The simulated characteristics were in good agreement with the measured characteristics.