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Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection
- Issue Date
- Mar-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- avalanche photodiode; separate absorption multiplication (SAM); silicon carbide; UV
- Citation
- IEEE SENSORS JOURNAL, v.8, no.3-4, pp.233 - 237
- Journal Title
- IEEE SENSORS JOURNAL
- Volume
- 8
- Number
- 3-4
- Start Page
- 233
- End Page
- 237
- ISSN
- 1530-437X
- Abstract
- Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of similar to 45% at room temperature were achieved at the wavelength of 290-300 turn for a packaged device with an active area of 1 x 1 mm(2). The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range front room temperature to 230 degrees C.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)