Effect of band-to-band tunnelling leakage on 28 nm MOSFET design
- Authors
- Lim, T.; Kim, Y.
- Issue Date
- 17-Jan-2008
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.44, no.2, pp.157 - 159
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 44
- Number
- 2
- Start Page
- 157
- End Page
- 159
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/22789
- DOI
- 10.1049/el:20082596
- ISSN
- 0013-5194
- Abstract
- The effect of band-to-band tunnelling leakage on 28 nm MOSFETs is studied using TCAD simulation. For low-standby power applications, the leakage current of the MOSFET is increasingly dominated by GIDL instead of a subthreshold leakage as the S/D extension doping increases. The GIDL current can be reduced by relaxing the lateral abruptness of the drain at the expense of a higher S/D series resistance. Based on the simulated results, we have found that a very limited margin in S/D design is allowed to meet both leakage current and performance requirement for 28 nm MOSFETs.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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