Electrical/Microstructural Characterization of Dielectric Thin Films Prepared on Transparent SubstratesElectrical/Microstructural Characterization of Dielectric Thin Films Prepared on Transparent Substrates
- Other Titles
- Electrical/Microstructural Characterization of Dielectric Thin Films Prepared on Transparent Substrates
- Authors
- 유일환; 황진하
- Issue Date
- 2008
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- Pb(ZrTi)O3; Dielectric Properties; Electrical Properties; Annealing Temperature.; Pb(ZrTi)O3; Dielectric Properties; Electrical Properties; Annealing Temperature.
- Citation
- 반도체디스플레이기술학회지, v.7, no.1, pp.53 - 57
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 7
- Number
- 1
- Start Page
- 53
- End Page
- 57
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23309
- ISSN
- 1738-2270
- Abstract
- Pb(ZrTi)O3 thin films were prepared on transparent conducting oxides, through sol-gel processing. The processing variables such as spin velocity, spin time and annealing temperature were investigated using a statistical design of experiments. Dielectric properties were determined through capacitance-voltage measurements and electrical characterizations evaluated using current-voltage characteristics. The leakage current is determined mainly by annealing. The capacitance and breakdown voltage is found to be independent of the processing variables. The sophisticatedly controlled PZT thin films have been confirmed through microscopic image.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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