저전력 응용을 위한 28 nm 금속 게이트/high-k MOSFET 디자인28 nm MOSFET Design for Low Standby Power Applications
- Other Titles
- 28 nm MOSFET Design for Low Standby Power Applications
- Authors
- 임토우; 장준용; 김영민
- Issue Date
- 2008
- Publisher
- 대한전기학회
- Keywords
- GIDL; Lateral abruptness(도핑농도분포); Series resistance(직렬저항)
- Citation
- 전기학회논문지ABCD, v.57, no.2, pp.235 - 238
- Journal Title
- 전기학회논문지ABCD
- Volume
- 57
- Number
- 2
- Start Page
- 235
- End Page
- 238
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23328
- ISSN
- 1229-2443
- Abstract
- This paper explores 28 nm MOSFET design for LSTP (Low Standby Power) applications using TCAD (Technology Computer Aided Design) simulation. Simulated results show that the leakage current of the MOSFET is increasingly dominated by GIDL (Gate Induced Drain Leakage) instead of a subthreshold leakage as the Source/Drain extension doping increases. The GIDL current can be reduced by grading lateral abruptness of the drain at the expense of a higher Source/Drain series resistance. For 28 nm MOSFET suggested in ITRS, we have shown Source/Drain design becomes even more critical to meet both leakage current and performance requirement.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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