ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators
DC Field | Value | Language |
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dc.contributor.author | Noh, Seok Hwan | - |
dc.contributor.author | Choi, Wonjun | - |
dc.contributor.author | Oh, Min Suk | - |
dc.contributor.author | Hwang, D. K. | - |
dc.contributor.author | Lee, Kimoon | - |
dc.contributor.author | Im, Seongil | - |
dc.contributor.author | Jang, Sungjin | - |
dc.contributor.author | Kim, Eugene | - |
dc.date.accessioned | 2022-01-14T07:42:22Z | - |
dc.date.available | 2022-01-14T07:42:22Z | - |
dc.date.created | 2022-01-14 | - |
dc.date.issued | 2007-06-18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23571 | - |
dc.description.abstract | The authors report on the fabrication of a top-gate ZnO thin-film transistor (TFT) with a polymer dielectric/ferroelectric double-layer gate insulator that was formed on patterned ZnO through a sequential spin-casting process of 450-nm-thick poly-4-vinylphenol (PVP) and 200-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Compared to the single P(VDF/TrFE) layer, double layer shows remarkably reduced leakage current with the aid of the PVP buffer. TFT with the PVP/P(VDF/TrFE) double layer exhibits a field effect mobility of 0.36 cm(2)/V and a large memory hysteresis in the transfer characteristics due to the ferroelectric P(VDF/TrFE). The retention of the device lasted over 2 h.(c) 2007 American Institute of Physics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DIELECTRICS | - |
dc.subject | ELEMENT | - |
dc.title | ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eugene | - |
dc.identifier.doi | 10.1063/1.2749841 | - |
dc.identifier.scopusid | 2-s2.0-34547282879 | - |
dc.identifier.wosid | 000247468900093 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.90, no.25 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 90 | - |
dc.citation.number | 25 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | ELEMENT | - |
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