Studies on poly(methyl methacrylate) dielectric layer for field effect transistor: Influence of polymer tacticity
- Authors
- Park, Ji Hoon; Hwang, D. K.; Lee, Jiyoul; Im, Seongil; Kim, Eugene
- Issue Date
- 26-Feb-2007
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- gate insulator; tacticity; field effect transistor; poly(methyl methacrylate); organic field effect transistor; electrical properties and measurements
- Citation
- THIN SOLID FILMS, v.515, no.7-8, pp.4041 - 4044
- Journal Title
- THIN SOLID FILMS
- Volume
- 515
- Number
- 7-8
- Start Page
- 4041
- End Page
- 4044
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23634
- DOI
- 10.1016/j.tsf.2006.10.121
- ISSN
- 0040-6090
- Abstract
- Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p(+)-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k=2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacenc/i-PMMA/p(+)-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm(2)/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film. (c) 2006 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Science > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23634)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.