Stability of ITO/Buffer Layer/TPD/Alq3/CathodeOrganic Light-emitting DiodeStability of ITO/Buffer Layer/TPD/Alq3/CathodeOrganic Light-emitting Diode
- Other Titles
- Stability of ITO/Buffer Layer/TPD/Alq3/CathodeOrganic Light-emitting Diode
- Authors
- Dong-Hoe Chung; Joon Ho Ahn; Hyun-Seok Oh; Jung Kyu Park; Won-Jae Lee; Sung Jai Choi; Kyung-Uk Jang; Eun Chul Shin; Tae Wan Kim
- Issue Date
- 2007
- Publisher
- 한국전기전자재료학회
- Keywords
- Organic light-emitting diode; Buffer layer; Energy barrier; Lifetime; Stability
- Citation
- Transactions on Electrical and Electronic Materials, v.8, no.6, pp.260 - 264
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 8
- Number
- 6
- Start Page
- 260
- End Page
- 264
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24155
- ISSN
- 1229-7607
- Abstract
- We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high (1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/ PEDOT:PSS/TPD/Alq3/LiAl at an initial luminance of 300 cd/m2.
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