Low-voltage pentacene thin-film transistor with a polymer/YOx/polymer triple-layer dielectric on a plastic substrate
DC Field | Value | Language |
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dc.contributor.author | Hwang, D. K. | - |
dc.contributor.author | Choi, Jeong-M. | - |
dc.contributor.author | Park, Ji Hoon | - |
dc.contributor.author | Kim, Jae Hoon | - |
dc.contributor.author | Kim, Eugene | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2022-01-14T09:44:36Z | - |
dc.date.available | 2022-01-14T09:44:36Z | - |
dc.date.created | 2022-01-14 | - |
dc.date.issued | 2007 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24322 | - |
dc.description.abstract | We report on the fabrication of pentacene thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/yttrium oxide (YOx)/PVP triple-layer dielectric deposited on an indium-tin oxide (ITO)/plastic substrate. Our PVP/YOx/PVP triple layer exhibited 2 orders of magnitude lower gate current leakage than that of a PVP/YOx double layer because the former has a PVP buffer to cope with the irregular surfaces of the ITO/plastic substrate. Adopting the triple-layer dielectric, our pentacene TFTs with NiOx and Au source/drain electrodes exhibited high field mobilities of similar to 1.37 and 0.84 cm(2)/V s, respectively, under low driving voltage conditions (less than -8 V). We conclude that our triple-layer approach is quite a promising and practical way to realize a flexible low-voltage high-performance organic TFT on ITO/plastic substrates with rough surfaces. (c) 2007 The Electrochemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ART. NO. 023504 | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | GATE INSULATORS | - |
dc.title | Low-voltage pentacene thin-film transistor with a polymer/YOx/polymer triple-layer dielectric on a plastic substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eugene | - |
dc.identifier.doi | 10.1149/1.2432939 | - |
dc.identifier.scopusid | 2-s2.0-33846943642 | - |
dc.identifier.wosid | 000244071400025 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.10, no.4, pp.H117 - H119 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | H117 | - |
dc.citation.endPage | H119 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ART. NO. 023504 | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | GATE INSULATORS | - |
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