Low-voltage pentacene thin-film transistor with a polymer/YOx/polymer triple-layer dielectric on a plastic substrate
- Authors
- Hwang, D. K.; Choi, Jeong-M.; Park, Ji Hoon; Kim, Jae Hoon; Kim, Eugene; Im, Seongil
- Issue Date
- 2007
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.10, no.4, pp.H117 - H119
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 10
- Number
- 4
- Start Page
- H117
- End Page
- H119
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24322
- DOI
- 10.1149/1.2432939
- ISSN
- 1099-0062
- Abstract
- We report on the fabrication of pentacene thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/yttrium oxide (YOx)/PVP triple-layer dielectric deposited on an indium-tin oxide (ITO)/plastic substrate. Our PVP/YOx/PVP triple layer exhibited 2 orders of magnitude lower gate current leakage than that of a PVP/YOx double layer because the former has a PVP buffer to cope with the irregular surfaces of the ITO/plastic substrate. Adopting the triple-layer dielectric, our pentacene TFTs with NiOx and Au source/drain electrodes exhibited high field mobilities of similar to 1.37 and 0.84 cm(2)/V s, respectively, under low driving voltage conditions (less than -8 V). We conclude that our triple-layer approach is quite a promising and practical way to realize a flexible low-voltage high-performance organic TFT on ITO/plastic substrates with rough surfaces. (c) 2007 The Electrochemical Society.
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