Light Emitting Properties of Si Micro Single Crystal Grown by Mixed-Source HVPE Method

Abstract

The light-emitting property of Si micro single crystals was investigated. A Si micro single crystal grown by using the atmospheric-pressure, mixed-source hydride vapor phase epitaxy (HVPE) method has a hexagonal cross-section and has a form of microneedle with an aspect ratio (length/diameter) of 140 or more. Through measurements using field-emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and high-resolution X-ray diffraction (HR-XRD), the grown Si micro crystals were found to be pure single crystals. The electroluminescence (EL) characteristics were investigated by designing a structure of a Si micro single crystal light-emitting device by using a submount substrate. In addition, the cathodoluminescence (CL) and the photoluminescence (PL) were measured and compared to investigate the optical properties. These results are expected to contribute to the application of optoelectronic devices and to the growth of a new Si structure. © 2021 The Korean Physical Society. All rights reserved.