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Characteristics of poly(vinyl acetate) as a gate insulating material in organic thin film transistors
- Authors
- Sung, J. H.; Park, S. J.; Park, J. H.; Choi, H. J.; Choi, J. S.
- Issue Date
- 1-Jun-2006
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- organic thin film transistor; poly(vinyl acetate); dielectric constant; OTFF
- Citation
- SYNTHETIC METALS, v.156, no.11-13, pp.861 - 864
- Journal Title
- SYNTHETIC METALS
- Volume
- 156
- Number
- 11-13
- Start Page
- 861
- End Page
- 864
- ISSN
- 0379-6779
- Abstract
- We report the physical characteristics of poly(vinyl acetate) (PVAc) as a polymeric gate insulator in the organic thin film transistors (OTFTs), in which the OTFTs require not only a simple packing process with a relatively low cost compared to conventional inorganic electronics but also their compatibility with flexible substrates. The PVAc gives dielectric constant values in the range of 3.2-8.3, which can be adopted as a good gate insulator for OTFTs. The fabricating condition of OTFTs using the PVAc was improved by both adjusting its viscosity with that of a medium, and controlling the surface morphology and spin coating conditions. All these meet the requirement for a new organic gate-insulator, which can improve the performance of the present OTFTs. (c) 2006 Elsevier B.V. All rights reserved.
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