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Al과 Ni를 이용한 비정질 실리콘의 결정화 거동

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dc.contributor.author권순규-
dc.contributor.author최균-
dc.contributor.author김병익-
dc.contributor.author황진하-
dc.date.accessioned2022-02-07T06:45:20Z-
dc.date.available2022-02-07T06:45:20Z-
dc.date.created2022-02-07-
dc.date.issued2006-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24930-
dc.description.abstractMetal-induced crystallization (MIC) of amourphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after aluminum-induced crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.-
dc.publisher한국세라믹학회-
dc.titleAl과 Ni를 이용한 비정질 실리콘의 결정화 거동-
dc.title.alternativeCrystallization behavior of Amorphous Silicon with Al and Ni-
dc.typeArticle-
dc.contributor.affiliatedAuthor황진하-
dc.identifier.bibliographicCitation한국세라믹학회지, v.43, no.4, pp.7 - 7-
dc.relation.isPartOf한국세라믹학회지-
dc.citation.title한국세라믹학회지-
dc.citation.volume43-
dc.citation.number4-
dc.citation.startPage7-
dc.citation.endPage7-
dc.type.rimsART-
dc.identifier.kciidART001096290-
dc.description.journalClass2-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorMIC-
dc.subject.keywordAuthorAIC-
dc.subject.keywordAuthormetal-induced-
dc.subject.keywordAuthorcrystallization-
dc.subject.keywordAuthorMIC-
dc.subject.keywordAuthorAIC-
dc.subject.keywordAuthormetal-induced-
dc.subject.keywordAuthorcrystallization-
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