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Al과 Ni를 이용한 비정질 실리콘의 결정화 거동Crystallization behavior of Amorphous Silicon with Al and Ni

Other Titles
Crystallization behavior of Amorphous Silicon with Al and Ni
Authors
권순규최균김병익황진하
Issue Date
2006
Publisher
한국세라믹학회
Keywords
MIC; AIC; metal-induced; crystallization; MIC; AIC; metal-induced; crystallization
Citation
한국세라믹학회지, v.43, no.4, pp.7 - 7
Journal Title
한국세라믹학회지
Volume
43
Number
4
Start Page
7
End Page
7
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24930
ISSN
1229-7801
Abstract
Metal-induced crystallization (MIC) of amourphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after aluminum-induced crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.
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