Al과 Ni를 이용한 비정질 실리콘의 결정화 거동Crystallization behavior of Amorphous Silicon with Al and Ni
- Other Titles
- Crystallization behavior of Amorphous Silicon with Al and Ni
- Authors
- 권순규; 최균; 김병익; 황진하
- Issue Date
- 2006
- Publisher
- 한국세라믹학회
- Keywords
- MIC; AIC; metal-induced; crystallization; MIC; AIC; metal-induced; crystallization
- Citation
- 한국세라믹학회지, v.43, no.4, pp.7 - 7
- Journal Title
- 한국세라믹학회지
- Volume
- 43
- Number
- 4
- Start Page
- 7
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24930
- ISSN
- 1229-7801
- Abstract
- Metal-induced crystallization (MIC) of amourphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after aluminum-induced crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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