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A new top gate pentacene organic thin film transistor employing vapor deposited polyimide as a gate dielectric
- Authors
- Han, C.W.; Park, S.-G.; Kim, C.-Y.; Han, M.-K.; Hyung, G.-W.; Lee, D.-H.; Pyo, S.-W.; Kim, Y.K.
- Issue Date
- 2006
- Publisher
- Materials Research Society
- Citation
- Materials Research Society Symposium Proceedings, v.937, pp.137 - 142
- Journal Title
- Materials Research Society Symposium Proceedings
- Volume
- 937
- Start Page
- 137
- End Page
- 142
- ISSN
- 0272-9172
- Abstract
- A top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm 2/Vs as a mobility, about 103 as an on-off ratio (I on/off), -7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope. © 2006 Materials Research Society.
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)