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Effects of SAMs treatment by ALD on the performance of organic thin film transistors
- Authors
- Kim, H.; Park, J.; Bong, K.-W.; Kang, J.-M.; Kim, H.-M.; Choi, J.-S.
- Issue Date
- 2006
- Keywords
- ALD; OTFTs; Pentacene; PVP; SAMs; Surface treatment
- Citation
- SID Conference Record of the International Display Research Conference, pp.326 - 328
- Start Page
- 326
- End Page
- 328
- ISSN
- 1083-1312
- Abstract
- The characteristics of OTFTs have been improved by using SAMs that were formed by atomic layer deposition which is an ultra-thin film deposition technique. SAMs make pentacene be deposited in the upright order on the gate insulator. The operational characteristic improvements of the OTFTs with the SAM will be discussed. © 2006 SID.
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