Pentacene-based TTFTs with polymer gate dielectric and NiOx electrodes

Abstract

We report on the fabrication of pentacene-based transparent thin-film transistors (TTFTs) that employ pentacene, NiOx, and poly-4-vinylphenol (PVP) for channel, source-drain (S/D) electrode, and gate dielectric, respectively. Spin-coated PVP showed decent dielectric strength (1.5 MV/cm) and constant (k = 3.9). Semitransparent NiOx for S/D electrodes of which the work function is well matched to that of pentacene were deposited on a 50 nm thick pentacene channel by thermal evaporation of NiO powder. NiOx electrodes showed effective transmittance of similar to 40% in the visible range along with good sheet resistance of similar to 60 Omega/rectangle. Our pentacene-based TTFT exhibited a field effect mobility as large as 0.07 cm(2)/V s in the dark, and an on/off current ratio of 10(5). Our work demonstrates that spin-coated PVP and thermal evaporated NiOx are promising gate dielectric and S/D electrode materials for organic TTFTs, respectively. (c) 2005 The Electrochemical Society. All rights reserved.