Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
비전도성 접착제를 이용한 COG 본딩용 Sn/Ag 범프에서 본딩 응력이 접속저항에 미치는 영향Effect of Bonding Stress on the Contact Resistance of the Sn/Ag Bump for Chip-on-Glass Bonding Using Non-conductive Adhesive
- Other Titles
- Effect of Bonding Stress on the Contact Resistance of the Sn/Ag Bump for Chip-on-Glass Bonding Using Non-conductive Adhesive
- Issue Date
- 2005
- Publisher
- 대한금속·재료학회
- Keywords
- Electronic packaging; Chip on glass; Flip chip; Sn Bump; Contact resistance
- Citation
- 대한금속·재료학회지, v.43, no.3, pp.248 - 254
- Journal Title
- 대한금속·재료학회지
- Volume
- 43
- Number
- 3
- Start Page
- 248
- End Page
- 254
- ISSN
- 1738-8228
- Abstract
- Chip-on-glass bonding using onconductive adhesive was accomplished with joining of the Sn/Ag bumps, and the average contact resistance of the Sn/Ag bump was measured with variation of the bonding stress. Average contact resistance of the Sn/Ag bump could be obtained from the slope of the curve for daisy chain resistance vs. number of Sn/Ag bumps. With increasing the bonding stress from 31.8 MPa to 69.8 MPa, the average contact resistance decreased from 30 mΩ/bump to 15.6 mΩ/bump. With further increasing the bonding stress above 69.8 MPa, however, the average contact resistance changed little within the range of 12.9~15.6 mΩ/bump. Among the factors affecting the contact resistance with variation of the bonding stress, plastic deformation of the Sn/Ag bump had larger effect than the amount of the microvoids remaining at the contact interface between Sn/Ag bumps.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.