Interfacial Electrical/Dielectric Characterization in Low TemperaturePolycrystalline SiInterfacial Electrical/Dielectric Characterization in Low TemperaturePolycrystalline Si
- Other Titles
- Interfacial Electrical/Dielectric Characterization in Low TemperaturePolycrystalline Si
- Authors
- 황진하
- Issue Date
- 2005
- Publisher
- 한국마이크로전자및패키징학회
- Keywords
- Impedance spectroscopy; Electrical/dielectric properties; Polycrystalline; Silicon; Microstructure; Thin Film transistors1. IntroductionLiquid crystal displays (LCDs) possess the dominant position in flat panel technologies; currently. The LCDs have; Impedance spectroscopy; Electrical/dielectric properties; Polycrystalline; Silicon; Microstructure; Thin Film transistors1. IntroductionLiquid crystal displays (LCDs) possess the dominant position in flat panel technologies; currently. The LCDs have
- Citation
- 마이크로전자 및 패키징학회지, v.12, no.1, pp.77 - 86
- Journal Title
- 마이크로전자 및 패키징학회지
- Volume
- 12
- Number
- 1
- Start Page
- 77
- End Page
- 86
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25588
- ISSN
- 1226-9360
- Abstract
- Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At 360 mJ/cm2, the maximum in capacitance and the minimum in resistance correspond to the largest grain sizes of unimodal distribution in polycrystalline Si. The electrical/dielectric characterization is compared with Raman spectroscopic characterizations in terms of microstructure.
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