Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature
DC Field | Value | Language |
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dc.contributor.author | Hwang, D.K. | - |
dc.contributor.author | Park, J.H. | - |
dc.contributor.author | Choi, J.-M. | - |
dc.contributor.author | Lee, J. | - |
dc.contributor.author | Jeong, S.H. | - |
dc.contributor.author | Kim, E. | - |
dc.contributor.author | Kim, J.H. | - |
dc.contributor.author | Im, S. | - |
dc.date.accessioned | 2022-02-17T05:42:27Z | - |
dc.date.available | 2022-02-17T05:42:27Z | - |
dc.date.created | 2022-02-17 | - |
dc.date.issued | 2005 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25667 | - |
dc.description.abstract | We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT. © 2006 Materials Research Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Materials Research Society | - |
dc.title | Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, E. | - |
dc.identifier.doi | 10.1557/proc-0905-dd05-15 | - |
dc.identifier.scopusid | 2-s2.0-34249946311 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.905, pp.47 - 52 | - |
dc.relation.isPartOf | Materials Research Society Symposium Proceedings | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 905 | - |
dc.citation.startPage | 47 | - |
dc.citation.endPage | 52 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
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