Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature
- Authors
- Hwang, D.K.; Park, J.H.; Choi, J.-M.; Lee, J.; Jeong, S.H.; Kim, E.; Kim, J.H.; Im, S.
- Issue Date
- 2005
- Publisher
- Materials Research Society
- Citation
- Materials Research Society Symposium Proceedings, v.905, pp.47 - 52
- Journal Title
- Materials Research Society Symposium Proceedings
- Volume
- 905
- Start Page
- 47
- End Page
- 52
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25667
- DOI
- 10.1557/proc-0905-dd05-15
- ISSN
- 0272-9172
- Abstract
- We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT. © 2006 Materials Research Society.
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