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Defect structure studies of bulk and nano-indium-tin oxide

Authors
Gonzalez, GBMason, TOQuintana, JPWarschkow, OEllis, DEHwang, JHHodges, JPJorgensen, JD
Issue Date
1-Oct-2004
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.96, no.7, pp.3912 - 3920
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
96
Number
7
Start Page
3912
End Page
3920
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25737
DOI
10.1063/1.1783610
ISSN
0021-8979
Abstract
The defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experimental techniques, including high-resolution synchrotron x-ray diffraction, extended x-ray absorption fine structure, and time-of-flight neutron diffraction on powder specimens. The structural results include atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials. These structural parameters were correlated with theoretical calculations and in situ electrical conductivity and thermopower measurements as well as existing defect models, with special reference to the model of Frank and Kostlin [G. Frank and H. Kostlin, Appl. Phys. A 27, 197 (1982)]. (C) 2004 American Institute of Physics.
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