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Temperature dependent electrical properties in ITO/TPD/Alq(3)/Al organic light-emitting diodes
- Issue Date
- 4-Apr-2003
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- organic light-emitting diodes; conduction mechanism; hopping model; Fowler-Nordheim tunneling
- Citation
- SYNTHETIC METALS, v.137, no.1-3, pp.1041 - 1042
- Journal Title
- SYNTHETIC METALS
- Volume
- 137
- Number
- 1-3
- Start Page
- 1041
- End Page
- 1042
- ISSN
- 0379-6779
- Abstract
- Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq(3)/Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8Ksimilar to300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant. And we have obtained a zero field barrier height to be about 0.6similar to0.8eV
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Related Researcher
- Kim, Tae Wan
- Engineering (Applied Science)