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Polyimide 터널 장벽을 이용한 Au/polyimide/유기 단분자막/Pb 구조에서 비탄성 전자 터널링에 관한 연구Inelastic Etron Tnneling in Au/polyimide/monolayer Organic Flm/Pb Sructures using a Plyimide Brrier
- Other Titles
- Inelastic Etron Tnneling in Au/polyimide/monolayer Organic Flm/Pb Sructures using a Plyimide Brrier
- Issue Date
- 2004
- Publisher
- 한국전기전자재료학회
- Keywords
- Polyimide; Langmuir-blodgett(LB) thin film; Inelastic electron tunneling spectroscopy(IETS)
- Citation
- 전기전자재료학회논문지, v.17, no.2, pp.196 - 200
- Journal Title
- 전기전자재료학회논문지
- Volume
- 17
- Number
- 2
- Start Page
- 196
- End Page
- 200
- ISSN
- 1226-7945
- Abstract
- Using polyimide Langmuir-Blodgett(LB) films as a tunneling barrier, we fabricated Au/Polyimide/1-layer arachidic acid/Pb structure in order to investigate electron transport properties through a junction. It was found that 9-layer polyimide LB films function as a good tunneling barrier in a study of current-voltage(I-V) characteristics. And several peaks originating in the vibrational modes of the constituent molecules of 1-layer arachidic acid LB films were clearly observed in d2V/dI2-V curves.
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Related Researcher
- Kim, Tae Wan
- Engineering (Applied Science)