Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates
- Authors
- Lee, J.-M.; Lee, J.; Oh, H.; Kim, J.; Shong, B.; Park, T.J.; Kim, W.-H.
- Issue Date
- 1-Jul-2022
- Publisher
- Elsevier B.V.
- Keywords
- ALD-etching supercycle; Aminodisilane precursor; Area-selective atomic layer deposition; Enlarged deposition selectivity; Inherent substrate-dependent selectivity; Physisorption
- Citation
- Applied Surface Science, v.589
- Journal Title
- Applied Surface Science
- Volume
- 589
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26763
- DOI
- 10.1016/j.apsusc.2022.152939
- ISSN
- 0169-4332
- Abstract
- Area-selective atomic layer deposition (AS-ALD) offers complementary bottom-up patterning with atomic-level accuracy on pre-defined areas in conjunction with conventional top-down patterning, so it has attracted tremendous interest for enablement of multi-dimensional nanostructures toward sub-10 nm scale technology. In this work, we report a methodology for achieving inherently selective deposition of high-quality oxide thin films through chemoselective adsorption of an aminodisilane precursor, 1,2-bis(diisopropylamino)disilane (BDIPADS), on oxide versus nitride substrates. Density functional theory (DFT) calculations show higher reactivity for adsorption of BDIPADS on OH-terminated SiO2 compared with NH2-terminated SiN surfaces, indicating selective growth of SiO2 films in the SiO2 area. Applying BDIPADS precursor to both SiO2 and SiN substrates results in inherent deposition selectivity of ∼ 1 nm even without the use of inhibitory molecules such as self-assembled monolayers. Using this inherent selectivity as a starting point, we further enhance deposition selectivity using combined ALD-etching supercycle strategies in which HF-wet etching step is periodically inserted after 20 cycles of ALD SiO2, leading to an enlarged deposition selectivity of approximately 5 nm after repeated ALD-etching supercycles. This approach can be envisaged to provide a practically applicable strategy toward highly selective deposition using inherent AS-ALD that can be incorporated into upcoming 3D bottom-up nanofabrication. © 2022
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