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Trench isolation step-induced (TRISI) narrow width effect on MOSFET (vol 23, pg 600, 2002)
- Authors
- Kim, Y; Sridhar, S; Chatterjee, A
- Issue Date
- Nov-2002
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.23, no.11, pp.676 - 676
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 23
- Number
- 11
- Start Page
- 676
- End Page
- 676
- ISSN
- 0741-3106
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- There are no files associated with this item.
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Related Researcher
- Kim, Young min
- Engineering (Electronic & Electrical Engineering)