Defect interaction by dual MeV ion implantation in silicon

Abstract

In this study we conducted experiments to reveal the interactions between different types of ion-induced defects upon annealing in MeV (phosphorous + carbon) implanted silicon. We intentionally tried to overlap the interstitial-rich zone induced by P implantation with the vacancy-rich zone induced by C implantation. Double crystal X-ray diffraction (DCXRD) rocking curve analyses for the samples annealed at 550 degreesC indicated that a positive strain built up at similar to2.3 mum by a single 3 MeV P+ implantation was effectively reduced by similar to50% using dual implantation (3 MeV P- + 3 MeV C+), However, the amount of strain relaxation in the C implanted layer does not decrease upon annealing. (C) 2002 Elsevier Science B.V. All rights reserved.