Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The hole blocking effect of 4,4 ',4 ''-trifluoro-triazine (tfTZ) in electroluminescent devices
- Issue Date
- 2001
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- hole blocking layer; current density; turn-on voltage
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.371, pp.431 - 434
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 371
- Start Page
- 431
- End Page
- 434
- ISSN
- 1542-1406
- Abstract
- The hole blocking characteristics of 4,4',4 " -trifluoro-triazine (tfTZ) were studied. The current density vs. voltage characteristics and the electroluminescence spectra of elelctroluminescent(EL) devices, which were fabricated with the structure of ITO/tfTZ/hole transport layer/emitting layer were measured. In this letter, we investigated the electrical and optical effects accompanied by the thickness change of tfTZ layer. In EL devices including tfTZ layer, current density and turn-on voltage decreased in comparison with those without tfTZ layer.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Chemical Engineering Major > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.