Thickness dependence of the ferroelectric characteristics of SBT and SBTN thin films
- Authors
- Park, JD; Oh, TS
- Issue Date
- 2001
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- SBT; SBTN; thin film; ferroelectric properties; thickness dependence; size effects
- Citation
- INTEGRATED FERROELECTRICS, v.33, no.1-4, pp.235 - 244
- Journal Title
- INTEGRATED FERROELECTRICS
- Volume
- 33
- Number
- 1-4
- Start Page
- 235
- End Page
- 244
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27317
- DOI
- 10.1080/10584580108222305
- ISSN
- 1058-4587
- Abstract
- SrBi(2.4)Ta(2)O(9) (SBT) and SrBi(2.4)(Ta(0.75)Nb(0.25))O(9) (SBTN) thin films were prepared using LSMCD and MOD processes, respectively, and their ferroelectric properties were characterized with variation of the film thickness. The LSMCD-derived SET film of 70 nm thickness exhibited the 2P(r) of 15.9 muC/cm(2) and E(c) of 69 kV/cm at +/-5 V. Within the thickness range of 70 similar to 410 nm. the SET and SBTN films exhibited the size effects, i.e.. a decrease of the remanent polarization and the relative permittivity and an increase of the coercive field with a reduction of the film thickness. The SET and SBTN films of 70 similar to 410 nm thickness exhibited the fatigue-free behavior up to 10(12) switching cycles.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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