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Preparation of Pt/SrBi2Ta2O9/TiO2/Si structures for metal-ferroelectric-insulator-semiconductor field-effect-transistors
- Issue Date
- Dec-2000
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.1072 - 1076
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 37
- Number
- 6
- Start Page
- 1072
- End Page
- 1076
- ISSN
- 0374-4884
- Abstract
- The Pt/SBT/TiO2 /Si structure has been proposed for metal-ferroelectric-insulator-semi-conductor field-effect-transistor (MFIS-FET) applications. Liquid source misted chemical deposition was used to deposit a SrBi2.4Ta2O9 (SBT) thin film on a Si(100) substrate with a TiO2 buffer layer deposited by DC reactive sputtering. The capacitance of the Pt/SBT/TiO2/Si structure in the accumulation region became larger with increasing oxygen content in the sputtering gas used for the TiO2 deposition. The Pt/SBT/TiO2/Si structure exhibited a C-V hysteresis loop with a memory window of 1 V and could be applied for MFIS-FET applications.
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