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New Precharge-free and Low-power Matchline Structure of Content Addressable Memory

Authors
Lee, SanghyunKim, Youngmin
Issue Date
2021
Publisher
IEEE
Keywords
Content-addressable memory (CAM); low-power; high-speed; precharge-free; matchline (ML) structure
Citation
2021 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS-ASIA (ICCE-ASIA)
Journal Title
2021 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS-ASIA (ICCE-ASIA)
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27819
DOI
10.1109/ICCE-Asia53811.2021.9641910
ISSN
0000-0000
Abstract
Content-Addressable Memory (CAM) is a high-speed search engine based on parallel search. However, the parallel search method is inefficient in terms of power consumption, so CAM is currently only used in certain applications. Therefore, many designs for low power operation have been reported. Matchline (ML) has two structures, NOR type and NAND type, and is a parallel search method suitable for high speed and low power, respectively. However, each ML structure has drawbacks. Among them, in NAND-type, there is a problem to be solved low noise margin due to the pass transistor. In this paper, we present an architecture that achieves both high-speed and low-pow er-consumption by eliminating precharge with a NAND-type ML structure suitable for low-power designs. As a result of circuit simulation in 65-nm process, delay and power reduced up to 13% and 25x, respectively.
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