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Low Power Gate Diffusion Input Full Adder using Floating Body

Authors
Park, G.Kim, Y.
Issue Date
2021
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
1-bit full adder; Floating Body; Gate Diffusion Input; Low power
Citation
Proceedings - International SoC Design Conference 2021, ISOCC 2021, pp.337 - 338
Journal Title
Proceedings - International SoC Design Conference 2021, ISOCC 2021
Start Page
337
End Page
338
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27837
DOI
10.1109/ISOCC53507.2021.9613966
ISSN
0000-0000
Abstract
Conventionally, a large number of transistors are required to make a 1-bit full adder. However, this affects the circuit's power consumption and delay and increases the overall area, which is a critical problem for modern high-level integration technology. Therefore, a 1-bit full adder based on Gate Diffusion Input (GDI) cell was proposed as an alternative method. It has less power consumption, faster speed, and a smaller area. In this paper, we propose a 1-bit full adder using floating body at the GDI cell. Simulations show that the proposed circuit decreases the average power consumption maintaining high performance and stability. It can also provide robust operation because of its high reliability on VDD and temperature variation. © 2021 IEEE.
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