Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors
- Authors
- Seo, Seunggi; Lee, Yujin; Oh, Il-Kwon; Shong, Bonggeun; Yoon, Hwi; Lee, Sanghun; Kim, Hyungjun
- Issue Date
- Jan-2020
- Publisher
- IEEE
- Keywords
- fluorine free tungsten; plasma-enhanced atomic layer deposition (PE-ALD); Tungsten chloride precursor; W films; Density Functional Theory
- Citation
- 2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), pp.103 - 105
- Journal Title
- 2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)
- Start Page
- 103
- End Page
- 105
- ISSN
- 2380-632X
- Abstract
- Atomic layer deposited tungsten (W) films has been widely used in widespread applications due to its good characteristics such as low resistivity, high thermal and chemical stability. WF6 is the most commonly used precursor for vapor deposition of W. Hydrofluoric acid (HF) byproduct, etching of substrate and diffusion of fluorine could degrade device performance. To overcome these issues fluorine-free tungsten precursors have recently received attention. In this work, we fundamentally investigated PE-ALD process of W by using tungsten chloride (WClx) precursor and argon and hydrogen plasma. Developed W process could deposit W films with low Cl impurity and low resistivity.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Chemical Engineering Major > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Shong, Bong geun
- Engineering (Chemical Engineering)