Electroless copper plating for electronics application

Abstract

In copper metallization, resistivity of copper seed layer is very important since the thickness of seed layer is less than 200nm. Conventionally sputtering and CVD have been used for this purpose, however electroless plated copper is simple process and the resistivity of copper deposit is less than that of copper prepared by sputtering and CVD. In this study electroless depositions of copper were conducted on different substrate to find optimum conditions of electroless copper plating for electronic applications. To find optimum conditions, the effects and selectivity of activation method on several substrates were investigated. The effects of copper salt concentration, reducing agent, complexing agent and inhibitor on deposition rate was investigated. The resistivity of copper with thickness was also measured.