A Finite Element Model for Stochastic Set Operation in Phase-Change Memory
- Authors
- Shin, Min-Kyu; Lee, Donghwa; Cha, Pil-Ryung; Kwon, Yongwoo
- Issue Date
- 2019
- Publisher
- IEEE
- Keywords
- modeling and simulation; finite-element method; phase-change memory; crystallization; nucleation and growth
- Citation
- 2019 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), pp.294 - 295
- Journal Title
- 2019 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC)
- Start Page
- 294
- End Page
- 295
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28033
- Abstract
- We successfully combined electrothermal and phase-field models in a finite element framework to establish a device model for set operation in phase-change memory. The electrothermal model calculates current density, Joule heating and heat transfer, and the resulting temperature profile from bias conditions while the phase-field model calculates thermal history dependent phase-change such as melt-quench and stochastic nucleation followed by growth. In this work, we will discuss capabilities of our model and its applications to set pulse design and intrinsic variability analysis.
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- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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