Fabrication of transparent full-colored quantum dot-light-emitting devices
- Authors
- Han, Chang-Yeol; Lee, Ki-Heon; Jo, Jung-Ho; Kim, Jong-Hoon; Kim, Min-Seok; Kim, Jiwan; Kim, Yong-Hoon; Yang, Heesun
- Issue Date
- 2017
- Publisher
- IEEE
- Citation
- 2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), pp.130 - 132
- Journal Title
- 2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)
- Start Page
- 130
- End Page
- 132
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28154
- Abstract
- Analogous to organic light-emitting diode (OLED), quantum dot-light-emitting diode (QLED) possesses a high eligibility with respect to device structure for the transformation to transparent device that may be pursued as a next-generation display. We report the fabrication of a series of highly transparent mono-colored blue, green, and red QLEDs with a standard architecture simply by replacing thermally evaporated Al with sputtered indium tin oxide (ITO) film as a top cathode. To alleviate the sputtering damage on the underlying electron transport layer while securing a reasonable sheet resistance of ITO film, a moderate sputtering power is chosen to attain high device performance. Fabrication of a transparent tri-colored white QLED, comprising an emitting layer mixed with three primary colored QDs, is also demonstrated.
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Collections - Graduate School > Materials Science and Engineering > 1. Journal Articles
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